? semiconductor components industries, llc, 2012 november, 2012 ? rev. 0 1 publication order number: ngtg50n60flw/d NGTG50N60FLWG igbt this insulated gate bipolar transistor (igbt) features a robust and cost effective trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. features ? low saturation voltage using trench with field stop technology ? low switching loss reduces system power dissipation ? optimized for high speed switching ? 5 s short ? circuit capability ? these are pb ? free devices typical applications ? power factor correction ? solar inverters ? uninterruptable power supply (ups) absolute maximum ratings rating symbol value unit collector ? emitter voltage v ces 600 v collector current @ t c = 25 c @ t c = 100 c i c 100 50 a pulsed collector current, t pulse limited by t jmax i cm 200 a short ? circuit withstand time v ge = 15 v, v ce = 400 v, t j +150 c t sc 5 s gate ? emitter voltage v ge 20 v power dissipation @ t c = 25 c @ t c = 100 c p d 223 89 w operating junction temperature range t j ? 55 to +150 c storage temperature range t stg ? 55 to +150 c lead temperature for soldering, 1/8? from case for 5 seconds t sld 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. to ? 247 case 340l style 4 c g 50 a, 600 v v cesat = 1.65 v e device package shipping ordering information NGTG50N60FLWG to ? 247 (pb ? free) 30 units / rail http://onsemi.com a = assembly location y = year ww = work week g = pb ? free package marking diagram g50n60fl aywwg g e c
NGTG50N60FLWG http://onsemi.com 2 thermal characteristics rating symbol value unit thermal resistance junction ? to ? case, for igbt r jc 0.56 c/w thermal resistance junction ? to ? ambient r ja 40 c/w electrical characteristics (t j = 25 c unless otherwise specified) parameter test conditions symbol min typ max unit static characteristic collector ? emitter breakdown voltage, gate ? emitter short ? circuited v ge = 0 v, i c = 500 a v (br)ces 600 ? ? v collector ? emitter saturation voltage v ge = 15 v, i c = 50 a v ge = 15 v, i c = 25 a, t j = 150 c v cesat 1.40 ? 1.65 1.85 1.90 ? v gate ? emitter threshold voltage v ge = v ce , i c = 350 a v ge(th) 4.5 5.5 6.5 v collector ? emitter cut ? off current, gate ? emitter short ? circuited v ge = 0 v, v ce = 600 v v ge = 0 v, v ce = 600 v, t j = 150 c i ces ? ? ? ? 0.5 2 ma gate leakage current, collector ? emitter short ? circuited v ge = 20 v , v ce = 0 v i ges ? ? 200 na dynamic characteristic input capacitance v ce = 20 v, v ge = 0 v, f = 1 mhz c ies ? 7302 ? pf output capacitance c oes ? 220 ? reverse transfer capacitance c res ? 190 ? gate charge total v ce = 480 v, i c = 50 a, v ge = 15 v q g ? 310 ? nc gate to emitter charge q ge ? 60 ? gate to collector charge q gc ? 150 ? switching characteristic, inductive load turn ? on delay time t j = 25 c v cc = 400 v, i c = 50 a r g = 10 v ge = 0 v/ 15 v* t d(on) ? 116 ? ns rise time t r ? 43 ? turn ? off delay time t d(off) ? 292 ? fall time t f ? 78 ? turn ? on switching loss e on ? 1.1 ? mj turn ? off switching loss e off ? 0.6 ? total switching loss e ts ? 1.7 ? turn ? on delay time t j = 150 c v cc = 400 v, i c = 50 a r g = 10 v ge = 0 v/ 15 v* t d(on) ? 110 ? ns rise time t r ? 45 ? turn ? off delay time t d(off) ? 300 ? fall time t f ? 105 ? turn ? on switching loss e on ? 1.4 ? mj turn ? off switching loss e off ? 1.1 ? total switching loss e ts ? 2.5 ? *includes diode reverse recovery loss using ngtb50n60flwg.
NGTG50N60FLWG http://onsemi.com 3 typical characteristics 250 200 150 100 50 0 01 2 34 8 7 6 5 v ce , collector ? emitter voltage (v) i c , collector current (a) figure 1. output characteristics 300 01 2 34 8 7 6 5 v ce , collector ? emitter voltage (v) i c , collector current (a) figure 2. output characteristics 250 200 150 100 50 0 v ge = 17 v to 13 v 11 v 10 v 9 v 8 v 7 v t j = 25 c t j = 150 c v ge = 17 v to 13 v 11 v 10 v 9 v 8 v 7 v 250 200 150 100 50 0 01 2 34 8 7 6 5 v ce , collector ? emitter voltage (v) i c , collector current (a) figure 3. output characteristics t j = ? 55 c v ge = 17 v to 13 v 11 v 10 v 9 v 8 v 7 v 200 048 16 12 v ge , gate ? emitter voltage (v) i c , collector current (a) figure 4. typical transfer characteristics 180 160 140 120 100 80 60 40 20 0 t j = 25 c t j = 150 c 3.00 ? 75 ? 25 25 175 125 75 t j , junction temperature ( c) v ce , collector ? emitter voltage (v) figure 5. v ce(sat) vs. t j 2.50 2.00 1.50 1.00 0.50 0.00 i c = 100 a i c = 50 a i c = 25 a i c = 5 a 100000 0 10 20 100 90 v ce , collector ? emitter voltage (v) capacitance (pf) figure 6. typical capacitance 10000 1000 100 10 80 30 40 70 60 50 c ies c oes c res
NGTG50N60FLWG http://onsemi.com 4 typical characteristics 20 0 q g , gate charge (nc) v ge , gate ? emitter voltage (v) figure 7. typical gate charge 50 100 150 200 250 300 350 15 10 5 0 v ce = 480 v 1.6 0 t j , junction temperature ( c) switching loss (mj) figure 8. switching loss vs. temperature 20 40 60 100 120 140 160 1.4 1.2 1 0.8 0.6 0.4 0.2 0 80 e on e off v ce = 400 v v ge = 15 v i c = 50 a r g = 10 v ce = 400 v v ge = 15 v i c = 50 a r g = 10 1000 0 t j , junction temperature ( c) switching time (ns) figure 9. switching time vs. temperature 20 40 60 100 120 140 160 80 100 10 1 t d(off) t d(on) t f t r 4.5 8 i c , collector current (a) switching loss (mj) figure 10. switching loss vs. i c 20 32 44 68 80 92 104 56 4 3.5 3 2.5 2 1.5 1 0.5 0 v ce = 400 v v ge = 15 v t j = 150 c r g = 10 e on e off 8 203244 688092104 56 1000 i c , collector current (a) switching time (ns) figure 11. switching time vs. i c 100 10 1 t d(off) t d(on) t f t r v ce = 400 v v ge = 15 v t j = 150 c r g = 10
NGTG50N60FLWG http://onsemi.com 5 typical characteristics 7 5 r g , gate resistor ( ) switching loss (mj) figure 12. switching loss vs. r g 15 25 35 55 65 75 85 45 v ce = 400 v v ge = 15 v i c = 50 a t j = 150 c e on e off 6 5 4 3 2 1 0 10000 5 r g , gate resistor ( ) switching time (ns) figure 13. switching time vs. r g 15 25 35 55 65 75 85 45 1000 100 10 1 t d(off) t d(on) t f t r v ce = 400 v v ge = 15 v i c = 50 a t j = 150 c 3 175 v ce , collector ? emitter voltage (v) switching loss (mj) figure 14. switching loss vs. v ce 225 275 325 425 475 525 575 375 2.4 1.8 1.2 0.6 0 e on e off v ge = 15 v i c = 50 a r g = 10 t j = 150 c 1000 175 v ce , collector ? emitter voltage (v) switching time (ns) figure 15. switching time vs. v ce 225 275 325 425 475 525 575 375 100 10 1 v ge = 15 v i c = 50 a r g = 10 t j = 150 c t d(off) t d(on) t f t r 1000 1 v ce , collector ? emitter voltage (v) i c , collector current (a) figure 16. safe operating area 10 100 1000 100 10 1 0.1 0.01 50 s 100 s 1 ms dc operation single nonrepetitive pulse t c = 25 c curves must be derated linearly with increase in temperature figure 17. reverse bias safe operating area v ce , collector ? emitter voltage (v) i c , collector current (a) 1000 100 10 1 1 10 100 1000 v ge = 15 v, t c = 125 c
NGTG50N60FLWG http://onsemi.com 6 typical characteristics 50% duty cycle 20% 10% 5% 2% 1% single pulse r jc = 0.56 junction case c 1 c 2 r 1 r 2 r n c i = i /r i duty factor = t 1 /t 2 peak t j = p dm x z jc + t c c n i (sec) 1.0e ? 4 5.48e ? 5 0.002 0.03 0.1 r i ( c/w) 0.02087 0.05041 0.07919 0.11425 0.19393 figure 18. igbt transient thermal impedance r(t) ( c/w) pulse time (sec) 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 2.0 0.09951 figure 19. test circuit for switching characteristics
NGTG50N60FLWG http://onsemi.com 7 figure 20. definition of turn on waveform
NGTG50N60FLWG http://onsemi.com 8 figure 21. definition of turn off waveform
NGTG50N60FLWG http://onsemi.com 9 package dimensions to ? 247 case 340l ? 02 issue f n p a k w f d g u e 0.25 (0.010) m yq s j h c 4 123 ? t ? ? b ? ? y ? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 2 pl 3 pl 0.63 (0.025) m tb m ? q ? l dim min max min max inches millimeters a 20.32 21.08 0.800 8.30 b 15.75 16.26 0.620 0.640 c 4.70 5.30 0.185 0.209 d 1.00 1.40 0.040 0.055 e 1.90 2.60 0.075 0.102 f 1.65 2.13 0.065 0.084 g 5.45 bsc 0.215 bsc h 1.50 2.49 0.059 0.098 j 0.40 0.80 0.016 0.031 k 19.81 20.83 0.780 0.820 l 5.40 6.20 0.212 0.244 n 4.32 5.49 0.170 0.216 p --- 4.50 --- 0.177 q 3.55 3.65 0.140 0.144 u 6.15 bsc 0.242 bsc w 2.87 3.12 0.113 0.123 style 4: pin 1. gate 2. collector 3. emitter 4. collector on semiconductor and are registered trademar ks of semiconductor components industries, llc (s cillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to an y products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of th e application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products ar e not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associ ated with such unintended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action em ployer. this literature is subject to all applicable copyrig ht laws and is not fo r resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ngtg50n60flw/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative
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